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BUK9Y104-100B
N-channel TrenchMOS logic level FET
Rev. 04 -- 7 April 2010 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low on-state resistance Q101 compliant Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 C rating
1.3 Applications
12 V, 24 V and 42 V loads Automotive systems DC-to-DC converters General purpose power switching Solenoid drivers
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj 25 C; Tj 175 C VGS = 5 V; Tmb = 25 C; see Figure 1; see Figure 3 Tmb = 25 C Min Typ Max Unit 100 V
14.8 A 59 W
Static characteristics RDSon VGS = 10 V; ID = 5 A; Tj = 25 C VGS = 5 V; ID = 5 A; Tj = 25 C; see Figure 11; see Figure 12 86 91 99 104 m m
Avalanche ruggedness EDS(AL)S non-repetitive ID = 14.8 A; Vsup 100 V; drain-source RGS = 50 ; VGS = 5 V; avalanche energy Tj(init) = 25 C; unclamped gate-drain charge VGS = 5 V; ID = 5 A; VDS = 80 V; see Figure 13 35 mJ
Dynamic characteristics QGD 4.7 nC
NXP Semiconductors
BUK9Y104-100B
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S S S G D source source source gate mounting base; connected to drain
mbb076
Simplified outline
mb
Graphic symbol
D
G S
1234
SOT669 (LFPAK)
3. Ordering information
Table 3. Ordering information Package Name BUK9Y104-100B LFPAK Description Version plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 Type number
BUK9Y104-100B
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 7 April 2010
2 of 14
NXP Semiconductors
BUK9Y104-100B
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 C; VGS = 5 V; see Figure 1; see Figure 3 Tmb = 100 C; VGS = 5 V; see Figure 1 IDM Ptot Tstg Tj IS ISM EDS(AL)S peak drain current total power dissipation storage temperature junction temperature source current peak source current non-repetitive drain-source avalanche energy repetitive drain-source avalanche energy Tmb = 25 C tp 10 ms; pulsed; Tmb = 25 C ID = 14.8 A; Vsup 100 V; RGS = 50 ; VGS = 5 V; Tj(init) = 25 C; unclamped see Figure 2
[1][2][3] [4]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions Tj 25 C; Tj 175 C RGS = 20 k Min -15 -55 -55 Typ Max 100 100 15 14.8 10.48 59 59 175 175 14.8 59 35 Unit V V V A A A W C C A A mJ
Tmb = 25 C; tp 10 s; pulsed; see Figure 3 Tmb = 25 C
Source-drain diode
Avalanche ruggedness
EDS(AL)R
-
-
-
J
[1] [2] [3] [4]
Maximum value not quoted. Repetitive rating defined in avalanche rating figure. Single-pulse avalanche rating limited by maximum junction temperature of 175 C. Repetitive avalanche rating limited by an average junction temperature of 170 C. Refer to application note AN10273 for further information.
BUK9Y104-100B
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 7 April 2010
3 of 14
NXP Semiconductors
BUK9Y104-100B
N-channel TrenchMOS logic level FET
20 ID (A) 15
003aac524
102 IAL (A) 10
003aac503
(1)
10
1
(2)
5
10-1
(3)
0 0 50 100 150 Tmb (C) 200
10-2 10-3
10-2
10-1
1
tAL (ms)
10
Fig 1.
Continuous drain current as a function of mounting base temperature
Fig 2.
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
003aac624
102 Limit RDSon = VDS / ID ID (A) 10 s 10 100 s
DC 1 1ms 10ms 100ms 10-1 1 10
102
VDS (V)
103
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
BUK9Y104-100B
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 7 April 2010
4 of 14
NXP Semiconductors
BUK9Y104-100B
N-channel TrenchMOS logic level FET
5. Thermal characteristics
Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base Conditions see Figure 4 Min Typ Max 2.53 Unit K/W
10 Zth (j-mb) (K/W) = 0.5 1 0.2 0.1
003aac483
10-1
0.05 0.02 single shot
P
=
tp T
tp T
t
10-2 10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
BUK9Y104-100B
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 7 April 2010
5 of 14
NXP Semiconductors
BUK9Y104-100B
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Symbol V(BR)DSS VGS(th) VGSth Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage gate-source threshold voltage Conditions ID = 0.25 mA; VGS = 0 V; Tj = 25 C ID = 0.25 mA; VGS = 0 V; Tj = -55 C ID = 1 mA; VDS = VGS; Tj = 25 C; see Figure 9; see Figure 10 ID = 1 mA; VDS = VGS; Tj = 175 C; see Figure 9; see Figure 10 ID = 1 mA; VDS = VGS; Tj = -55 C; see Figure 9; see Figure 10 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VDS = 100 V; VGS = 0 V; Tj = 25 C VDS = 0 V; VGS = 15 V; Tj = 25 C VDS = 0 V; VGS = -15 V; Tj = 25 C VGS = 10 V; ID = 5 A; Tj = 25 C VGS = 5 V; ID = 5 A; Tj = 175 C; see Figure 11 VGS = 4.5 V; ID = 5 A; Tj = 25 C VGS = 5 V; ID = 5 A; Tj = 25 C; see Figure 11; see Figure 12 IDSS QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf VSD trr Qr drain leakage current total gate charge gate-source charge gate-drain charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage reverse recovery time recovered charge IS = 5 A; VGS = 0 V; Tj = 25 C; see Figure 15 IS = 20 A; dIS/dt = -100 A/s; VGS = 0 V; VDS = 30 V VDS = 30 V; RL = 6 ; VGS = 5 V; RG(ext) = 10 VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 C; see Figure 14 VDS = 100 V; VGS = 0 V; Tj = 175 C ID = 5 A; VDS = 80 V; VGS = 5 V; see Figure 13 Dynamic characteristics 11 1.7 4.7 854 87 42 15 8 36 6 0.85 79 190 1139 105 58 1.2 nC nC nC pF pF pF ns ns ns ns V ns nC Min 100 90 1.25 0.5 Typ 1.65 0.02 2 2 86 91 Max 2.15 2.45 1 100 100 99 270 107 104 500 Unit V V V V V A nA nA m m m m A
Static characteristics
Source-drain diode
BUK9Y104-100B
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 7 April 2010
6 of 14
NXP Semiconductors
BUK9Y104-100B
N-channel TrenchMOS logic level FET
40 ID (A) 30 VGS (V) = 10
003aac953
400 RDSon (m) 2.8 3.2 3.6 3.8 5
003aac957
5 300 3.8 3.6 2.2 200 3.2 3 VGS (V) = 10
20
10 2.6 2.2 0 0 2 4 6 8 VDS (V) 10
100
0 0 10 20 30 ID (A) 40
Fig 5.
Output characteristics: drain current as a function of drain-source voltage; typical values.
30
003aac958
Fig 6.
Drain-source on-state resistance as a function of drain current; typical values.
20
003aac954
gfs (S) 25
ID (A) 15
20
10
15
5 Tj = 175 C Tj = 25 C
10 0 10 20 ID (A) 30
0 0 1 2 3 4 5 VGS (V)
Fig 7.
Forward transconductance as a function of drain current; typical values.
Fig 8.
Transfer characteristics: drain current as a function of gate-source voltage; typical values.
BUK9Y104-100B
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 7 April 2010
7 of 14
NXP Semiconductors
BUK9Y104-100B
N-channel TrenchMOS logic level FET
2.5 VGS(th) (V) 2 typ max
003aad557
10-1 ID (A) 10-2 min typ max
003aad565
1.5 min 1
10-3
10-4
0.5
10-5
0 -60
10-6 0 60 120 Tj (C) 180 0 1 2 VGS (V) 3
Fig 9.
Gate-source threshold voltage as a function of junction temperature
3
03aa29
Fig 10. Sub-threshold drain current as a function of gate-source voltage
110 RDSON (m)
003aac956
a
2
100
1
90
0 -60
80
0
60
120
Tj (C)
180
0
4
8
12
VGS (V)
16
Fig 11. Normalized drain-source on-state resistance factor as a function of junction temperature
Fig 12. Drain-source on-state resistance as a function of gate-source voltage; typical values.
BUK9Y104-100B
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 7 April 2010
8 of 14
NXP Semiconductors
BUK9Y104-100B
N-channel TrenchMOS logic level FET
5 VGS (V) 4 VDS = 14 V
003aac959
104 C (pF) 103
003aac952
3
VDS = 80 V
Ciss
2 102 1 Coss Crss
0 0 4 8 QG (nC) 12
10 10-1
1
10
VDS (V)
102
Fig 13. Gate-source voltage as a function of gate charge; typical values.
Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
003aac955
100 IS (A) 80
60
40 Tj = 175 C 20 Tj = 25 C
0 0.2
0.6
1
VSD (V)
1.4
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
BUK9Y104-100B
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 7 April 2010
9 of 14
NXP Semiconductors
BUK9Y104-100B
N-channel TrenchMOS logic level FET
7. Package outline
Plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
E b2 L1
A c2
A2
C E1 b3
mounting base D1 H D
b4
L2
1
e
2
3
b
1/2
4
wM A c X
e
A A1 C
(A 3)
detail X L yC 0 2.5 scale 5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A A1 A2 A3 b b2 b3 2.2 2.0 b4 0.9 0.7 c c2 D (1) D1(1) E(1) E1(1) max 5.0 4.8 3.3 3.1 e 1.27 H 6.2 5.8 L 0.85 0.40 L1 1.3 0.8 L2 1.3 0.8 w 0.25 y 0.1 8 0
1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62
0.25 0.30 4.10 4.20 0.19 0.24 3.80
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT669 REFERENCES IEC JEDEC MO-235 JEITA EUROPEAN PROJECTION ISSUE DATE 04-10-13 06-03-16
Fig 16. Package outline SOT669 (LFPAK)
BUK9Y104-100B All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 7 April 2010
10 of 14
NXP Semiconductors
BUK9Y104-100B
N-channel TrenchMOS logic level FET
8. Revision history
Table 7. Revision history Release date 20100407 Data sheet status Product data sheet Objective data sheet Change notice Supersedes BUK9Y104-100B_3 BUK9Y104-100B_2 Document ID BUK9Y104-100B_4 Modifications: BUK9Y104-100B_3
*
Status changed from objective to product.
20100211
BUK9Y104-100B
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 7 April 2010
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NXP Semiconductors
BUK9Y104-100B
N-channel TrenchMOS logic level FET
9. Legal information
9.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
Suitability for use in automotive applications -- This NXP Semiconductors product has been qualified for use in automotive applications. The product is not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer's third party customer(s) (hereinafter both referred to as "Application"). It is customer's sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
9.3
Disclaimers
Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
BUK9Y104-100B
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 7 April 2010
12 of 14
NXP Semiconductors
BUK9Y104-100B
N-channel TrenchMOS logic level FET
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, IC-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, Nexperia, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE -- are trademarks of NXP B.V. HD Radio and HD Radio logo -- are trademarks of iBiquity Digital Corporation.
Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
10. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BUK9Y104-100B
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 7 April 2010
13 of 14
NXP Semiconductors
BUK9Y104-100B
N-channel TrenchMOS logic level FET
11. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 7 April 2010 Document identifier: BUK9Y104-100B

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